Company Background

In 1998, Dr. K.H. Lee planted the first seed of GCT Semiconductor (GCT) with the development of a new version of the direct conversion architecture for RF transmission and reception functionality. The goal was to create an architecture that could be tailored to suit the demands of a variety of wireless applications while still taking advantage of the manufacturing yields, high level of integration and cost benefits of CMOS manufacturing processes.

Dr. Lee developed GCT's Direct Conversion CMOS RF technology, and founded GCT Semiconductor. Today, he serves as the company's President, CEO and Chairman of the Board.

Technology - Direct Conversion Architecture

GCT uses its patented direct conversion architecture to continue to develop wireless communications ICs that offer a variety of benefits for wireless devices. GCT's direct conversion architecture can be formatted to support multimode applications, which will enable devices to communicate via two or more of the many evolving communication standards in the marketplace.

GCT's version of the direct conversion architecture successfully combines the high performance of a super-heterodyne structure into a smaller die size with the associated cost and integration advantages of fabrication using standard CMOS processes. This proprietary technology can be applied to support the demands of many wireless communication standards, including GSM/GPRS, PHS (PAS), WCDMA, Bluetooth®, and IEEE 802.11b/g.

GCT successfully co-developed its RF CMOS process with its foundry partner, UMC, and adopted it into GCT's RF IC products. RF CMOS is a version of normal mixed-mode CMOS that includes on-chip inductors and varactors. It uniquely satisfies market demands for low cost, low power, highly integrated semiconductor products that support wireless applications.